Name: FQPF19N20
Brand: ON Semiconductor
SKU: FQPF19N20
Price: 0.99000 USD
Availability: InStock

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FQPF19N20

Manufacturer part number:FQPF19N20

Manufacturer:ON Semiconductor

Description:FQPF19N20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQPF19N20 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	19.4A
Number of Elements	1
Power Dissipation-Max	50W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	50W
Case Connection	ISOLATED
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 5.9A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11.8A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	190ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	80 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	11.8A
Threshold Voltage	5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	48A
Avalanche Energy Rating (Eas)	250 mJ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FQPF19N20 Product Details

FQPF19N20 Description

FQPF19N20 is a 200v N-Channel QFET? Power MOSFET. This N-Channel enhancement mode power MOSFET FQPF19N20 is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. The advanced MOSFET FQPF19N20 has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.