IRG4BC30K-S Description
IRG4BC30K-S is a 600v insulated gate bipolar transistor. As a Freewheeling Diode, we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGB. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC30K-S is in the D2 Pak package with 100W power dissipation.
IRG4BC30K-S Features
High short circuit rating optimized for motor control, tsc =10μs, @360V VcE (start), Tj= 125°C, VGE= 15V
Combines low conduction losses with the high switching speed
The latest generation design provides tighter parameter distribution and higher efficiency than previous generations
The latest generation 4 IGBTs offer the highest power density motor controls possible
This part replaces the IRGBC30K-S and IRGBC30M-S device
IRG4BC30K-S Applications
Automotive
Advanced driver assistance systems (ADAS)
Enterprise systems
Datacenter & enterprise computing
Personal electronics
Home theater & entertainment
