Name: IRGS4086PBF
Brand: Infineon Technologies
SKU: IRGS4086PBF
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Max Power Dissipation	160W
Element Configuration	Single
Power Dissipation	160W
Input Type	Standard
Power - Max	160W
Collector Emitter Voltage (VCEO)	2.96V
Max Collector Current	70A
Collector Emitter Breakdown Voltage	300V
Voltage - Collector Emitter Breakdown (Max)	300V
Current - Collector (Ic) (Max)	70A
Collector Emitter Saturation Voltage	2.1V
Test Condition	196V, 25A, 10Ohm
Vce(on) (Max) @ Vge, Ic	2.96V @ 15V, 120A
IGBT Type	Trench
Gate Charge	65nC
Td (on/off) @ 25°C	36ns/112ns
Radiation Hardening	No
RoHS Status	RoHS Compliant

IRGS4086PBF Product Details

IRGS4086PBF Description

This IGBT was created specifically for use in plasma display panels. In order to achieve low VCE(on) and low EPULSETM rating per silicon area, this device uses advanced trench IGBT technology, which increases panel efficiency. The operating junction temperature of 150 °C and high repeated peak current capacity are further features. These characteristics work together to make this IGBT a very effective, durable, and trustworthy device for PDP applications.