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IRG4BC20W-S

IRG4BC20W-S

IRG4BC20W-S

Infineon Technologies

IRG4BC20W-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC20W-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2001
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
Additional FeatureLOW CONDUCTION LOSS
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 225
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 60W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 13A
Turn On Time36 ns
Test Condition 480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 6.5A
Turn Off Time-Nom (toff) 300 ns
Gate Charge26nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 22ns/110ns
Switching Energy 60μJ (on), 80μJ (off)
RoHS StatusNon-RoHS Compliant
In-Stock:1623 items

IRG4BC20W-S Product Details

IRG4BC20W-S Benefits

Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)

Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)



IRG4BC20W-S Features

Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction)applications

Industry-benchmark switching losses improve the efficiency of all power supply topologies

50% reduction of Eoff parameter

Low IGBT conduction losses

Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

Lead-Free


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