Name: HGTG12N60A4D
Brand: ON Semiconductor
SKU: HGTG12N60A4D
Availability: InStock

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HGTG12N60A4D

Manufacturer part number:HGTG12N60A4D

Manufacturer:ON Semiconductor

Description:HGTG12N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HGTG12N60A4D Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Voltage - Rated DC	600V
Max Power Dissipation	167W
Current Rating	54A
Base Part Number	HGTG12N60
Number of Elements	1
Element Configuration	Single
Power Dissipation	167W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	17 ns
Transistor Application	POWER CONTROL
Rise Time	16ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	96 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	54A
Reverse Recovery Time	30 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2V
Turn On Time	33 ns
Test Condition	390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 12A
Continuous Collector Current	60A
Turn Off Time-Nom (toff)	180 ns
Gate Charge	78nC
Current - Collector Pulsed (Icm)	96A
Td (on/off) @ 25°C	17ns/96ns
Switching Energy	55μJ (on), 50μJ (off)
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

HGTG12N60A4D Product Details

HGTG12N60A4D Description

The HGTG12N60A4D from ON Semiconductor is a 600V N-channel IGBT with an anti-parallel hyperfast diode. The MOS gate high voltage switching IGBT family is represented by this SMPS series. The IGBT combines the best characteristics of MOSFETs and bipolar transistors. HGTG12N60A4D has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Reduces conduction and switching losses, allowing for the construction of high-efficiency and reliable systems. Higher control and repeatability of the top-side structure derive from an optimized production process, leading to tighter specifications and better EMI performance.