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IRGS15B60KPBF

IRGS15B60KPBF

IRGS15B60KPBF

Infineon Technologies

IRGS15B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGS15B60KPBF Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation208W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 22ns
Element ConfigurationSingle
Power Dissipation208W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 31A
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.2V
Turn On Time52 ns
Test Condition 400V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
Turn Off Time-Nom (toff) 231 ns
IGBT Type NPT
Gate Charge56nC
Current - Collector Pulsed (Icm) 62A
Td (on/off) @ 25°C 34ns/184ns
Switching Energy 220μJ (on), 340μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4804 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.26000$1.26
500$1.2474$623.7
1000$1.2348$1234.8
1500$1.2222$1833.3
2000$1.2096$2419.2
2500$1.197$2992.5

IRGS15B60KPBF Product Details

IRGS15B60KPBF Description

IRGS15B60KPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGS15B60KPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRGS15B60KPBF has the common source configuration.

IRGS15B60KPBF Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRGS15B60KPBF Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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