NGTD13T65F2WP Description
NGTD13T65F2WP developed by ON Semiconductor is a type of Trench Field Stop II IGBT Die for motor drive and inverter applications. It is designed based on Field Stop technology for low VCE(sat) loss to reduce system power dissipation. Based on its specific characteristics, the NGTD13T65F2WP IGBT is well suited for a wide range of applications, including industrial motor drives,
solar inverters, UPS systems, welding, and more.
NGTD13T65F2WP Features
Low VCE(sat) loss
Field Stop technology
Collector?Emitter Voltage, TJ = 25°C: 650V
Maximum junction temperature TJ : ?55 to +175 °C
NGTD13T65F2WP Applications
Industrial motor drives
Solar inverters
UPS systems
Welding
