NGTB20N120IHTG Description
NGTB20N120IHTG transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes NGTB20N120IHTG MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
NGTB20N120IHTG Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
NGTB20N120IHTG Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
