IRGR4045DTRPBF Description
IRGR4045DTRPBF is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGR4045DTRPBF is suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IRGR4045DTRPBF is in the D-Pak package with 77W power dissipation.
IRGR4045DTRPBF Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-Pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
IRGR4045DTRPBF Applications
Automotive
Advanced driver assistance systems (ADAS)
Communications equipment
Wireless infrastructure
Enterprise systems
Enterprise machine
