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SGR15N40LTM

SGR15N40LTM

SGR15N40LTM

ON Semiconductor

SGR15N40LTM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGR15N40LTM Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 400V
Max Power Dissipation45W
Current Rating130A
Element ConfigurationSingle
Input Type Standard
Collector Emitter Voltage (VCEO) 8V
Collector Emitter Breakdown Voltage400V
Vce(on) (Max) @ Vge, Ic 8V @ 4.5V, 130A
IGBT Type Trench
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:8490 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.798480$4.79848
10$4.526868$45.26868
100$4.270630$427.063
500$4.028896$2014.448
1000$3.800846$3800.846

SGR15N40LTM Product Details

SGR15N40LTM Description

SGR15N40LTM transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SGR15N40LTM MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor SGR15N40LTM has the common source configuration.

SGR15N40LTM Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

SGR15N40LTM Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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