STGW20V60F Description
This STGW20V60F is an IGBT developed using an advanced proprietary trench gate field-stop structure. The transistor STGW20V60F is a part of the V series IGBTs, representing an optimum compromise between conduction and switching losses to maximize the efficiency of high-frequency converters. Furthermore, the positive VcE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling.
STGW20V60F Features
Maximum junction temperature: Tj= 175 °C
Tail-less switching off
VcE(sat)= 1.8V (typ.)@lc= 20 A
Tight parameter distribution
Safe paralleling
Low thermal resistance
STGW20V60F Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high-frequency converters
