FGHL40S65UQ datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGHL40S65UQ Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Operating Temperature
-55°C~175°C TJ
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Input Type
Standard
Power - Max
231W
Reverse Recovery Time
319ns
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
80A
Test Condition
400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
306nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
32ns/260ns
Switching Energy
1.76mJ (on), 362μJ (off)
RoHS Status
ROHS3 Compliant
In-Stock:4345 items
FGHL40S65UQ Product Details
FGHL40S65UQ Description
Using the novel field stop generation IGBT technology, ON Semiconductor's new series of field stop 4th generation of RC IGBTs offer superior conduction and switching performance and easy parallel operation. The FGHL40S65UQ device is well suited for the resonant or soft switching application such as induction heating and microwave oven.
FGHL40S65UQ Features
Maximum Junction Temperature: TJ = 175°C
Positive Temperature Co?efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.36 V (Typ.) @IC = 40 A
100% of the Parts tested for ILM
High Input Impedance
Fast Switching
Tighten Parameter Distribution
RoHS Compliant
IGBT with Monolithic Reverse Conducting Diode
FGHL40S65UQ Applications
Induction Heating
Microwave Oven
Soft Switching Application
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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