SIGC11T60NCX1SA2 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
SIGC11T60NCX1SA2 Applications
? Industrial Motor Drive
? UPS
? Solar Inverters
? Welding
SIGC11T60NCX1SA2 Features
High speed H5 technology offering
*Ultra low loss switching thanks to Kelvin emitter pin in combination with TRENCHSTOPM 5
*Best-in-class efficiency in hard switching and resonant topologies
·Plug and play replacement of previous generation IGBTs650V breakdown voltage Low gate charge QG
·IGBT copacked with RAPID 1 fast and soft antiparallel diode Maximum junction temperature175°C
