Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRGR2B60KDTRRPBF

IRGR2B60KDTRRPBF

IRGR2B60KDTRRPBF

Infineon Technologies

IRGR2B60KDTRRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGR2B60KDTRRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation35W
Base Part Number IRGR2B60
Rise Time-Max 25ns
Element ConfigurationSingle
Input Type Standard
Power - Max 35W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.25V
Max Collector Current 6.3A
Reverse Recovery Time 68 ns
Collector Emitter Breakdown Voltage600V
Test Condition 400V, 2A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 2A
IGBT Type NPT
Gate Charge12nC
Current - Collector Pulsed (Icm) 8A
Td (on/off) @ 25°C 11ns/150ns
Switching Energy 74μJ (on), 39μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 75ns
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:1954 items

Pricing & Ordering

QuantityUnit PriceExt. Price

IRGR2B60KDTRRPBF Product Details

IRGR2B60KDTRRPBF Description


IRGR2B60KDTRRPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) non-punch through IGBT technology. Moreover, the IRGR2B60KDTRRPBF IGBT delivers rugged transient performance and low EMI.



IRGR2B60KDTRRPBF Features


Low diode VF

10μs short circuit capability

Square RBSOA

Ultrasoft diode reverse recovery characteristics

Positive VCE (on) temperature coefficient



IRGR2B60KDTRRPBF Applications


UPS

Motor control


Get Subscriber

Enter Your Email Address, Get the Latest News