IRGPC50F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGPC50F Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2017
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
FAST
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Input Type
Standard
Power - Max
200W
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
70A
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 39A
RoHS Status
Non-RoHS Compliant
In-Stock:3613 items
IRGPC50F Product Details
IRGPC50F Description
The International Rectifier IRGPC50F is an Insulated Gate Bipolar Transistor (IGBT) with higher useable current densities than comparable bipolar transistors and lower gate-drive requirements than the conventional power MOSFET. They offer significant advantages in a variety of high-voltage, high-current applications.
IRGPC50F Features
Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz)
IRGPC50F Applications
Variable-frequency drives (VFDs), Electric cars Trains Variable-speed refrigerators Lamp ballasts Arc-welding machines Air conditioners
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