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IRGP4760-EPBF

IRGP4760-EPBF

IRGP4760-EPBF

Infineon Technologies

IRGP4760-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP4760-EPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-40°C~175°C TJ
PackagingTube
Published 2014
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation325W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 325W
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 90A
Collector Emitter Breakdown Voltage650V
Test Condition 400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 48A
Gate Charge145nC
Current - Collector Pulsed (Icm) 144A
Td (on/off) @ 25°C 70ns/140ns
Switching Energy 1.7mJ (on), 1mJ (off)
RoHS StatusRoHS Compliant
In-Stock:4294 items

IRGP4760-EPBF Product Details

IRGP4760-EPBF Description


Insulated Gate Bipolar Transistor IRGP4760-EPBF



IRGP4760-EPBF Features


  • High Performance across a Variety of Applications

  • Unflappable Transient Performance

  • greater dependability

  • Excellent Parallel Operation with Current Sharing



IRGP4760-EPBF Applications


? Drive for industrial motors


? UPS


? Sun Inverters


? Welder


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