IRG4BC30W-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC30W-S Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1997
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
LOW CONDUCTION LOSS
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
225
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
IRG4BC30W-S
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
100W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
23A
Turn On Time
41 ns
Test Condition
480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 12A
Turn Off Time-Nom (toff)
300 ns
Gate Charge
51nC
Current - Collector Pulsed (Icm)
92A
Td (on/off) @ 25°C
25ns/99ns
Switching Energy
130μJ (on), 130μJ (off)
RoHS Status
Non-RoHS Compliant
In-Stock:2659 items
IRG4BC30W-S Product Details
IRG4BC30W-S Description
The IRG4BC30W-S is an IGBT 600 V 23 A 100 W Surface Mount D2PAK. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IRG4BC30W-S Features
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
Industry-benchmark switching losses improve efficiency of all power supply topologies
IRG4BC30W-S Applications
It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
It is used in UPS (Uninterruptible Power Supply) system.
It is used in AC and DC motor drives offering speed control.
It is used in chopper and inverters.
It is used in solar inverters.
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