IRG7CH50K10EF Description
IRG7CH50K10EF is a type of IGBT developed by Infineon Technologies based on low VCE (ON) Trench IGBT Technology. It is able to deliver high efficiency due to low VCE(on) and low switching losses. Excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient. Moreover, rugged transient performance for increased reliability, tight parameter distribution, and square RBSOA can be provided.
IRG7CH50K10EF Features
Low EMI
Low VCE (ON) Trench IGBT Technology
Low switching losses
Square RBSOA
Positive VCE (ON) temperature coefficient
Tight parameter distribution
IRG7CH50K10EF Applications
Medium power drives
UPS
HEV inverters
Welding
Induction heating
