IRG4BC20UD-SPBF Description
BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE
IRG4BC20UD-SPBF Features
? Compared to Generation 3, the Generation 4 IGBT design offers tighter parameter dispersion and greater efficiency.
? For usage in bridge topologies, IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes.
? D2Pak, a widely used packaging type
? Free of lead
IRG4BC20UD-SPBF Applications
Switching applications
