IRG8P45N65UD1-EPBF Description
IRG8P45N65UD1-EPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG8P45N65UD1-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
IRG8P45N65UD1-EPBF Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG8P45N65UD1-EPBF Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
