IRG4BC30S Bipolar Transistor Description
The IRG4BC30S bipolar transistor from Infineon represents the state-of-art manufacturing technique by enclosing the part into a compact TO-220AB package. This bipolar transistor is designed to replace industry-standard G-3 IR IGBTs and can work at low frequencies yet remain high efficiency at the same time.
IRG4BC30S Bipolar Transistor Features
High efficiency
Designed to be a "drop-in" replacement for equivalent Industry-standard Generation 3 IR IGBTs
Minimum Saturation
Available in a TO-220AB package
Low operating frequency: <1 kHz
IRG4BC30S Bipolar Transistor Applications
General-Purpose Amplifiers
LED Lights
Linear Applications
Pumps
High Current Devices
Motor Control
Low-Speed Switching Applications
HVAC System
Home Appliances
