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IRG4IBC30FDPBF

IRG4IBC30FDPBF

IRG4IBC30FDPBF

Infineon Technologies

IRG4IBC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4IBC30FDPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220AB Full-Pak
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2004
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Max Power Dissipation45W
Current Rating20.3A
Element ConfigurationSingle
Power Dissipation45W
Input Type Standard
Turn On Delay Time42 ns
Power - Max 45W
Rise Time26ns
Turn-Off Delay Time 310 ns
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 20.3A
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 20.3A
Collector Emitter Saturation Voltage1.8V
Test Condition 480V, 17A, 23Ohm, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Gate Charge51nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 42ns/230ns
Switching Energy 630μJ (on), 1.39mJ (off)
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2403 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.440080$6.44008
10$6.075547$60.75547
100$5.731648$573.1648
500$5.407215$2703.6075
1000$5.101147$5101.147

IRG4IBC30FDPBF Product Details

IRG4IBC30FDPBF Features

Very Low 1 59V voltage drop

2. 5kV, 60s insulation voltage日

4.8 mm creepage distance to the heatsink

Fast Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

IGBT co packaged with HEXFREDTM ultrafast,

ultrasoft recovery antiparallel diodes

Tighter parameter distribution

Industry-standard Isolated TO-220 FullpakTM

outline



IRG4IBC30FDPBF Benefits

Simplified assembly

Highest efficiency and power density

HEXFREDTM antiparallel Diode minimizes

switching losses and EMI

Lead-Free



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