IRG8CH29K10F Description
IRG8CH29K10F is a type of insulated gate bipolar transistor that is designed based on low VCE (ON) trench IGBT technology. Due to its low switching losses, it is ideally suitable for a wide range of switching frequencies. Excellent current sharing in parallel operation can be ensured based on tight parameter distribution and positive VCE(on) temperature coefficient. Moreover, the IRG8CH29K10F IGBT is able to deliver very soft turn-off characteristics, 10μs short circuit SOA, and square RBSOA.
IRG8CH29K10F Features
Tight parameter distribution
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
Positive VCE (ON) temperature coefficient
IRG8CH29K10F Applications
UPS
HEV inverter
Welding
Induction motor drives
