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IRGC4660B

  • IRGC4660B - IRGC4660B datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
  • IRGC4660B - IRGC4660B datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

IRGC4660B

IRGC4660B

Infineon Technologies

IRGC4660B datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGC4660B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mounting Type Surface Mount
Package / Case Die
Operating Temperature-55°C~175°C TJ
PackagingBulk
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Reverse Recovery Time 45ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 48A
IGBT Type Trench Field Stop
RoHS StatusROHS3 Compliant
In-Stock:1957 items

IRGC4660B Product Details

IRGC4660B Description


The IRGC4660B is an Insulated Gate Bipolar Transistor with 600V 35A Die on Film/Wafer.



IRGC4660B Features


  • Trench Field Stop Technology

  • Operating Temperature:-55°C~175°C TJ

  • Optimized for High-Speed Switching



IRGC4660B Applications


  • Solar Inverters


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