Name: STGD7NB120S-1
Brand: STMicroelectronics
SKU: STGD7NB120S-1
Availability: InStock

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STGD7NB120S-1

Manufacturer part number:STGD7NB120S-1

Manufacturer:STMicroelectronics

Description:STGD7NB120S-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGD7NB120S-1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	55W
Base Part Number	STGD7
Pin Count	3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	55W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	10A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	840 ns
Test Condition	960V, 7A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 7A
Gate Charge	29nC
Current - Collector Pulsed (Icm)	20A
Td (on/off) @ 25°C	570ns/-
Switching Energy	15mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

STGD7NB120S-1 Product Details

STGD7NB120S-1 Description

STMicroelectronics has created an innovative family of IGBTs, the PowerMESHTM IGBTs, with remarkable performances using the most recent high voltage technology based on a proprietary strip arrangement. A family with the suffix "S" has been tuned to obtain the least amount of on-voltage drop for low frequency applications (less than 1 kHz).