IRG7PH42UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG7PH42UDPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
320W
Number of Elements
1
Rise Time-Max
41ns
Element Configuration
Single
Power Dissipation
320W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
25 ns
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
229 ns
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
85A
Reverse Recovery Time
153 ns
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
1.7V
Turn On Time
51 ns
Test Condition
600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 30A
Turn Off Time-Nom (toff)
444 ns
IGBT Type
Trench
Gate Charge
157nC
Current - Collector Pulsed (Icm)
90A
Td (on/off) @ 25°C
25ns/229ns
Switching Energy
2.11mJ (on), 1.18mJ (off)
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
86ns
Height
20.7mm
Length
15.87mm
Width
5.3086mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2139 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$14.49000
$14.49
25
$12.76080
$319.02
100
$11.24340
$1124.34
500
$10.00176
$5000.88
IRG7PH42UDPBF Product Details
IRG7PH42UDPBF Description
IRG7PH42UDPBF is a TO-247-3 packaging insulated gate bipolar transistor with ultrafast soft recovery diode. Because of its low VCE (ON) and low switching losses, the IRG7PH42UDPBF has a high efficiency in a wide range of applications and is suited for a wide range of switching frequencies. It features excellent current sharing in parallel operation and has rugged transient performance for better reliability. Please consult the IRG7PH42UDPBF datasheet for further information.
IRG7PH42UDPBF Features
? Lead-Free ? Square RBSOA ? Low switching losses ? Tight parameter distribution ? 100% of the parts tested for ILM ? Ultra fast soft recovery co-pak diode ? Low VCE (ON) trench IGBT technology ? Positive VCE (ON) temperature co-efficient
