IRG7PH42UD1MPBF Description
IRG7PH42UD1MPBF is a 1200v insulated gate bipolar transistor with an ultra-low VF diode. The Infineon IRG7PH42UD1MPBF is optimized for induction heating and soft-switching applications. The IRG7PH42UD1MPBF provides High Efficiency due to Low VCE(on), low switching losses, and Ultra-low VF. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG7PH42UD1MPBF is in the TO-247AD package with 313W power dissipation.
IRG7PH42UD1MPBF Features
Low VcE (ON) trench IGBT technology
Low switching losses
Square RBSOA
Ultra-low VF Diode
1300Vpk repetitive transient capacity
100% of the parts tested for LM①
Positive VcE (ON) temperature coefficient
Tight parameter distribution
Lead-free package
IRG7PH42UD1MPBF Applications
Automotive
Hybrid, electric & powertrain systems
Communications equipment
Datacom module
Enterprise systems
Enterprise machine
