Name: IRGBC30F
Brand: Infineon Technologies
SKU: IRGBC30F
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1996
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	FAST
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Input Type	Standard
Power - Max	100W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-220AB
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	31A
Power Dissipation-Max (Abs)	100W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 17A
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	Non-RoHS Compliant

IRGBC30F Product Details

IRGBC30F IGBT Description

This Insulated Gate Bipolar Transistors (IGBT) IRGBC30F from Infineon have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. It provides substantial benefits to a host of high-voltage, high-current applications. It has low switching losses and low EMI.