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STGD8NC60KT4

STGD8NC60KT4

STGD8NC60KT4

STMicroelectronics

STGD8NC60KT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGD8NC60KT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation62W
Peak Reflow Temperature (Cel) 225
Base Part Number STGD8
Element ConfigurationSingle
Input Type Standard
Power - Max 62W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 15A
Collector Emitter Breakdown Voltage600V
Max Breakdown Voltage 600V
Test Condition 390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 3A
Gate Charge19nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 17ns/72ns
Switching Energy 55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3363 items

STGD8NC60KT4 Product Details

STGD8NC60KT4 Description


The STGD8NC60KT4 is an N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH? IGBT.



STGD8NC60KT4 Feature


  • Lower on voltage drop (Vcesat)

  • Lower CRES / CIES ratio (no cross-conduction susceptibility)

  • Very soft ultra-fast recovery antiparallel diode

  • Short circuit withstand time 10μs



STGD8NC60KT4 Applications


  • High-frequency motor controls

  • SMPS and PFC in both hard switch and resonant topologies

  • Motor drivers


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