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IRG7PG42UD-EPBF

IRG7PG42UD-EPBF

IRG7PG42UD-EPBF

Infineon Technologies

IRG7PG42UD-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7PG42UD-EPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2014
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation320W
Reach Compliance Code unknown
Element ConfigurationSingle
Input Type Standard
Power - Max 320W
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 85A
Reverse Recovery Time 153 ns
Collector Emitter Breakdown Voltage1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
IGBT Type Trench
Gate Charge157nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 25ns/229ns
Switching Energy 2.11mJ (on), 1.18mJ (off)
RoHS StatusRoHS Compliant
In-Stock:1749 items

IRG7PG42UD-EPBF Product Details

IRG7PG42UD-EPBF Description

A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power.



IRG7PG42UD-EPBF Features


Low VcE (oN) trench IGBT technology Low switching losses Square RBSOA

100% of the parts tested for

Positive VcE(ontemperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-free package

IRG7PG42UD-EPBF Applications


U.P.S. Welding

Solar Inverter Induction heating


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