IRG4BC40W-LPBF Description
IRG4BC40W-LPBF is a 600v insulated gate bipolar transistor. Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to 300 kHz). Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz("hard switched" mode). The Infineon IRG4BC40W-LPBF can be applied in Industrial, Aerospace & Defense, Enterprise systems, Enterprise machines, Personal electronics, and Tablets.
IRG4BC40W-LPBF Features
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
Industry-benchmark switching losses improve the efficiency of all power supply topologies
50% reduction of the Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers tighter parameters distribution， exceptional reliability
Lead-Free
IRG4BC40W-LPBF Applications
Industrial
Aerospace & Defense
Enterprise systems
Enterprise machine
Personal electronics
Tablets
