Name: IRG4PH20KPBF
Brand: Infineon Technologies
SKU: IRG4PH20KPBF
Availability: InStock

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IRG4PH20KPBF

Manufacturer part number:IRG4PH20KPBF

Manufacturer:Infineon Technologies

Description:IRG4PH20KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PH20KPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Supplier Device Package	TO-247AC
Weight	38.000013g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	1.2kV
Max Power Dissipation	60W
Current Rating	11A
Element Configuration	Single
Power Dissipation	60W
Input Type	Standard
Turn On Delay Time	23 ns
Power - Max	60W
Rise Time	28ns
Turn-Off Delay Time	93 ns
Collector Emitter Voltage (VCEO)	4.3V
Max Collector Current	11A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	11A
Collector Emitter Saturation Voltage	3.17V
Test Condition	960V, 5A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic	4.3V @ 15V, 5A
Gate Charge	28nC
Current - Collector Pulsed (Icm)	22A
Td (on/off) @ 25°C	23ns/93ns
Switching Energy	450μJ (on), 440μJ (off)
Height	20.701mm
Length	15.875mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRG4PH20KPBF Product Details

IRG4PH20KPBF Description

IRG4PH20KPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode. As a new IGBT, it is able to offer the highest power density motor controls possible, tighter parameter distribution, and higher efficiency compared with previous generations. The IRG4PH20KPBF IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for minimum EMI/Noise and switching losses in the Diode and IGBT.