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IRGSL6B60KPBF

IRGSL6B60KPBF

IRGSL6B60KPBF

Infineon Technologies

IRGSL6B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGSL6B60KPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2004
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 90W
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 13A
Test Condition 400V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 5A
IGBT Type NPT
Gate Charge18.2nC
Current - Collector Pulsed (Icm) 26A
Td (on/off) @ 25°C 25ns/215ns
Switching Energy 110μJ (on), 135μJ (off)
In-Stock:3277 items

IRGSL6B60KPBF Product Details

IRGSL6B60KPBF Description


IRGSL6B60KPBF is a 600v N-channel insulated gate bipolar transistor. The transistor IRGSL6B60KPBF provides benchmark motor control efficiency and excellent current sharing in Parallel Operation. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGSL6B60KPBF is in the D2Pak package with 90w Power Dissipation.



IRGSL6B60KPBF Features


Low VCE (on) Non-Punch Through IGBT Technology.

10us Short Circuit Capability.

Square RBSOA.

Positive VCE (on) Temperature Coefficient.

Lead-Free.



IRGSL6B60KPBF Applications


Communications equipment

Wired networking

Industrial

Pro audio, video & signage

Personal electronics

PC & notebooks


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