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IRG7PG35UPBF

IRG7PG35UPBF

IRG7PG35UPBF

Infineon Technologies

IRG7PG35UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7PG35UPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2014
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation210W
Reach Compliance Code unknown
Element ConfigurationSingle
Input Type Standard
Power - Max 210W
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 55A
Collector Emitter Breakdown Voltage1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Test Condition 600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
IGBT Type Trench
Gate Charge85nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 30ns/160ns
Switching Energy 1.06mJ (on), 620μJ (off)
RoHS StatusRoHS Compliant
In-Stock:2152 items

IRG7PG35UPBF Product Details

IRG7PG35UPBF Description


The IRG7PG35UPBF is an N Channel IGBT using Low VCE (ON) trench IGBT technology.



IRG7PG35UPBF Features


  • Low VCE (ON) trench IGBT technology

  • Low switching losses

  • Square RBSOA

  • 100% of the parts tested for ILM?

  • Positive VCE (ON) temperature coefficient

  • Tight parameter distribution

  • Lead-free package



IRG7PG35UPBF Applications


  • U.P.S.

  • Welding

  • Solar Inverter

  • Induction heating


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