IRG4PF50WD-201P Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Field Stop (FS) Trench construction and provides superior performance in demanding switching applications. Offering both low on?state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. A rugged co?packaged free-wheeling diode is incorporated into the device with a low forward voltage.
IRG4PF50WD-201P Features
Optimized for use in Welding and Switch Mode Power Supply applications
Industry benchmark switching losses improve the efficiency of all power supply topologies
50% reduction of the Eoff parameter
Low IGBT conduction losses
The latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability
IGBT oo-packaged with HEXFREDTM ultrafast. ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry-standard TO-247 AC package
Lead-Free
IRG4PF50WD-201P Applications
Lower switching losses allow more cost-effective operation and hence the efficient replacement of larger-die MOSFETs up to 100kH
HEXFREDTM diodes optimized for performance with IGBTs Minimized recovery characteristics reduce noise, EMI, and switching losses
