STGD10NC60KT4

Name: STGD10NC60KT4
Brand: STMicroelectronics
SKU: STGD10NC60KT4
Availability: InStock

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Manufacturer part number:STGD10NC60KT4

Manufacturer:STMicroelectronics

Description:STGD10NC60KT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGD10NC60KT4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	350.003213mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA FAST
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	60W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGD10
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	60W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	20A
Collector Emitter Breakdown Voltage	600V
Turn On Time	23 ns
Test Condition	390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 5A
Turn Off Time-Nom (toff)	242 ns
Gate Charge	19nC
Current - Collector Pulsed (Icm)	30A
Td (on/off) @ 25°C	17ns/72ns
Switching Energy	55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	2.4mm
Length	6.6mm
Width	6.2mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

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