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IRG4BC30FD-SPBF

IRG4BC30FD-SPBF

IRG4BC30FD-SPBF

Infineon Technologies

IRG4BC30FD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC30FD-SPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2010
JESD-609 Code e3
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation100W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating31A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation100W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time27ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 31A
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.8V
Turn On Time69 ns
Test Condition 480V, 17A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Turn Off Time-Nom (toff) 620 ns
Gate Charge51nC
Current - Collector Pulsed (Icm) 124A
Td (on/off) @ 25°C 42ns/230ns
Switching Energy 630μJ (on), 1.39mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 4.699mm
Length 10.668mm
Width 9.652mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1681 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.97000$3.97
50$3.37440$168.72
100$2.92440$292.44
500$2.48952$1244.76

IRG4BC30FD-SPBF Product Details

IRG4BC30FD-SPBF Description


IRG4BC30FD-SPBF is a 600v Fast CoPack insulated gate bipolar transistor with a hyperfast diode. The Infineon IRG4BC30FD-SPBF is manufactured by Infineon. Its category belongs to IGBT Transistors. It is applied to many fields, like Automotive Infotainment & cluster Communications equipment Wireless infrastructure Industrial Medical. And the main parameters of this part are Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, and RoHS. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).



IRG4BC30FD-SPBF Features


Continuous Collector Current IC @ TC = 25°C: 31A

Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, > 20kHz in resonant mode).

Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.

IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations.

Lead-Free



IRG4BC30FD-SPBF Applications


Automotive

Infotainment & cluster

Communications equipment

Wireless infrastructure

Industrial

Medical


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