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IRG4PC30UDPBF

IRG4PC30UDPBF

IRG4PC30UDPBF

Infineon Technologies

IRG4PC30UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4PC30UDPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional FeatureULTRA FAST SOFT RECOVERY
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation100W
Current Rating23A
Number of Elements 1
Element ConfigurationSingle
Power Dissipation100W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time40 ns
Transistor Application POWER CONTROL
Rise Time21ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 91 ns
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 23A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.1V
Turn On Time62 ns
Test Condition 480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Turn Off Time-Nom (toff) 300 ns
Gate Charge50nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 40ns/91ns
Switching Energy 380μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 20.3mm
Length 15.875mm
Width 5.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1423 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.69000$4.69
25$3.98280$99.57
100$3.45190$345.19
500$2.93852$1469.26

IRG4PC30UDPBF Product Details

IRG4PC30UDPBF Description

IRG4PC30UDPBF IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. IRG4PC30UDPBF MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT. Infineon Technologies IRG4PC30UDPBF half-bridge gate driver is used in isolated dc-to-dc power supply modules, and solar inverters.

IRG4PC30UDPBF Features

Floating channel designed for bootstrap operation

Undervoltage lockout

Combines low conduction losses with high switching speed

Tighter parameter distribution and higher efficiency than previous generations

IGBT co-packaged with ultrafast, ultrasoft recovery antiparallel diodes

IRG4PC30UDPBF Applications

Light vehicles

Power Management (SMPS)

Reference Design

Power tools

Robotics


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