IRGP6690DPBF Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
IRGP6690DPBF Features
Low VcEow, and switching losses
Optimized diode for full-bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C
5us short circuit SoA
Positive vce ,ox, temperature coefficient
Lead-free, RoHS compliant
IRGP6690DPBF Applications
Welding
H Bridge Converters
