IRGIB7B60KDPBF Description
BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE
IRGIB7B60KDPBF Features
? IGBT Technology with Low VCE (on) and No Punch Through.
? Short Circuit Capability of 10 s.
? RBSOA in Square.
? A positive temperature coefficient for the VCE (on).
? 175°C Maximum Junction Temperature rating.
? Free of lead
IRGIB7B60KDPBF Applications
Switching applications
