IRG4BC30UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC30UPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Additional Feature
ULTRA FAST SWITCHING
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
100W
Current Rating
23A
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
17 ns
Transistor Application
POWER CONTROL
Rise Time
9.6ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
78 ns
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
23A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Input Capacitance
1.1nF
Turn On Time
33 ns
Test Condition
480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 12A
Turn Off Time-Nom (toff)
320 ns
Gate Charge
50nC
Current - Collector Pulsed (Icm)
92A
Td (on/off) @ 25°C
17ns/78ns
Switching Energy
160μJ (on), 200μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
150ns
Height
16.51mm
Length
10.668mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free
In-Stock:4910 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.932878
$0.932878
10
$0.880073
$8.80073
100
$0.830258
$83.0258
500
$0.783262
$391.631
1000
$0.738927
$738.927
IRG4BC30UPBF Product Details
Description
The IRG4BC30UPBF is an insulated gate bipolar transistor. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.
Features
Industry standard TO-220AB package
Lead-Free
UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, ＞200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than Generation 3
IGBTs optimized for specified application conditions
Application
Motor Drive & Control
Alternative Energy
Power Management
Consumer Electronics
Maintenance & Repair
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