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FGA30N65SMD

FGA30N65SMD

FGA30N65SMD

ON Semiconductor

FGA30N65SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGA30N65SMD Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation300W
Number of Elements 1
Element ConfigurationSingle
Power Dissipation300W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 60A
Reverse Recovery Time 35ns
Collector Emitter Breakdown Voltage650V
Collector Emitter Saturation Voltage2.29V
Turn On Time41 ns
Test Condition 400V, 30A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Turn Off Time-Nom (toff) 125 ns
IGBT Type Field Stop
Gate Charge87nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 14ns/102ns
Switching Energy 716μJ (on), 208μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 20.1mm
Length 16.2mm
Width 5mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3728 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.507235$1.507235
10$1.421920$14.2192
100$1.341434$134.1434
500$1.265504$632.752
1000$1.193871$1193.871

FGA30N65SMD Product Details

FGA30N65SMD Description


The new series of field stop 2nd generation IGBTs from ON Semiconductor, which utilizes novel field stop IGBT technology, provide the best performance for solar inverter, UPS, welder, induction heating, telecom, ESS, and PFC applications. These applications require low conduction and switching losses.



FGA30N65SMD Features


  • Fast Switching

  • RoHS Compliant

  • High Current Capability

  • Tighten Parameter Distribution

  • Maximum Junction Temperature : TJ =175oC

  • Positive Temperature Co-efficient for Easy Parallel Operating

  • Low Saturation Voltage: VCE(sat) =1.98 V(Typ.) @ IC = 30 A



FGA30N65SMD Applications


  • Automotive

  • Personal electronics

  • Communications equipment


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