IKFW50N60ETXKSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
IKFW50N60ETXKSA1 Features
TRENCHSTOP technology offers:·Very low VCE(sat)
·Short circuit withstand time 5us atT=175°℃
·Positive temperature coefficient in VCE(sat)·Low EMI
.Very soft.fast recovery anti-parallel diode
·Maximumjunction temperature175°C
·2500 Vrms electrical isoation50/60Hzt=1min
·100% tested isolated mounting surface*Pb-free lead plating: RoHS compliant
·Complete product spectrum and PSpice Models
IKFW50N60ETXKSA1 Applications
·General Purpose Drives(GPD)
·Servo Drives
·Industrial UPS
·Welding
·Solar String Inverter
