Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRG4BC20SD

IRG4BC20SD

IRG4BC20SD

Infineon Technologies

IRG4BC20SD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC20SD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 1997
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional FeatureULTRA FAST SOFT RECOVERY
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 60W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 37ns
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 19A
Turn On Time99 ns
Test Condition 480V, 10A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 10A
Turn Off Time-Nom (toff) 1780 ns
Gate Charge27nC
Current - Collector Pulsed (Icm) 38A
Td (on/off) @ 25°C 62ns/690ns
Switching Energy 320μJ (on), 2.58mJ (off)
RoHS StatusNon-RoHS Compliant
In-Stock:3511 items

Pricing & Ordering

QuantityUnit PriceExt. Price
200$2.84605$569.21

IRG4BC20SD Product Details

IRG4BC20SD Bipolar Transistor Description


The IRG4BC20SD is a bipolar transistor with an ultra-soft recovery diode. It sees its wide applications in air-conditioners, PFC applications, and other home electronics appliances. It has low losses than regular MOSFET performance and fewer diode losses too. It has a wide range of operating temperatures of -55~150°C. It is capable of carrying a 7.0 A forward current at most.



IRG4BC20SD Bipolar Transistor Features


Extremely low voltage drop 1.4Vtyp. @ 10A

Minimizes power dissipation at up to 3 kHz PWM frequency in inverter drives, and up to 4 kHz in brushless DC drives.

Very Tight Vce(on) distribution

IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

Industry-standard TO-220AB package

IGBTs optimized for specific application conditions



IRG4BC20SD Bipolar Transistor Applications


Air Conditioner

Dishwasher

Fan

PFC

Pump

Washing Machine

Get Subscriber

Enter Your Email Address, Get the Latest News