IRG4BC10UPBF Description
IRG4BC10UPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 80 kHz in hard switching, and＞200 kHz in resonant mode. As a Generation 4 IGBT, it is able to offer the highest power density motor controls possible, tighter parameter distribution, and higher efficiency compared with Generation 3. The IRG4BC10UPBF IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
IRG4BC10UPBF Features
Industry-standard TO-22-AB packages
Extremely tight Vce(on) distribution
Tighter parameter distribution
Highest efficiencies available
Higher efficiency
IRG4BC10UPBF Applications
Industrial motor drive
Solar inverters
Welding
