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IHW15N120R2

IHW15N120R2

IHW15N120R2

Infineon Technologies

IHW15N120R2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHW15N120R2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature-40°C~175°C TJ
PackagingTube
Published 2006
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation357W
Pin Count3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation357W
Case Connection COLLECTOR
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 30A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage1.8V
Test Condition 600V, 15A, 14.8 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 15A
Turn Off Time-Nom (toff) 432 ns
IGBT Type Trench Field Stop
Gate Charge133nC
Current - Collector Pulsed (Icm) 45A
Td (on/off) @ 25°C -/282ns
Switching Energy 900μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3377 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.416669$1.416669
10$1.336480$13.3648
100$1.260830$126.083
500$1.189462$594.731
1000$1.122134$1122.134

IHW15N120R2 Product Details

IHW15N120R2 Description


IHW15N120R2 is a 1200v HighSpeed 2-Technology. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IHW15N120R2 is in the TO-220 package with 29W power dissipation. The Infineon IHW15N120R2 is designed for TV – Horizontal Line Deflection applications due to the following features.



IHW15N120R2 Features


loss reduction in resonant circuits

temperature stable behavior

parallel switching capability

tight parameter distribution

Eoff optimized for IC =3A

simple Gate-Control

Qualified according to JEDEC1 for target applications

Pb-free lead plating; RoHS compliant



IHW15N120R2 Applications


Automotive

Infotainment & cluster

Industrial

Grid infrastructure

Personal electronics

Gaming


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