IRFZ44E Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, providing the designer with
an extremely efficient and reliable device for use in a wide variety of applications.
IRFZ44E Features
Advanced Process Technology
Dynamic dv/dt Rating
175??C Operating Temperature
Fast Switching
Fully Avalanche Rated
TO-220AB
Lead-Free