AUIRFU8405 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
AUIRFU8405 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Surface Mount, Through Hole
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2013
Series
HEXFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Channels
1
Power Dissipation-Max
163W Tc
Element Configuration
Single
Power Dissipation
163W
Turn On Delay Time
12 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.98m Ω @ 90A, 10V
Vgs(th) (Max) @ Id
3.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
5171pF @ 25V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
155nC @ 10V
Rise Time
80ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
51 ns
Turn-Off Delay Time
51 ns
Continuous Drain Current (ID)
100A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
40V
Nominal Vgs
3 V
Height
6.22mm
Length
6.73mm
Width
2.39mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1140 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
AUIRFU8405 Product Details
AUIRFU8405 Description
AUIRFU8405 FET General Purpose Power, Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Infineon's Automotive-qualified COOLiRFET? Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature. AUIRFU8405 Features
● Advanced Process Technology ● New Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified AUIRFU8405 Applications
● Electric Power Steering (EPS) ● Battery Switch ● Start/Stop Micro Hybrid ● Heavy Loads ● DC-DC Converter
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