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IRFP4668PBF

IRFP4668PBF

IRFP4668PBF

Infineon Technologies

IRFP4668PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFP4668PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2008
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 9.7MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 520W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation520W
Case Connection DRAIN
Turn On Delay Time41 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.7m Ω @ 81A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10720pF @ 50V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Gate Charge (Qg) (Max) @ Vgs 241nC @ 10V
Rise Time105ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 74 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 130A
Threshold Voltage 5V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 520A
Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 760 mJ
Max Junction Temperature (Tj) 175°C
Nominal Vgs 5 V
Height 24.99mm
Length 15.87mm
Width 5.3086mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:731 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$8.12000$8.12
25$6.75440$168.86
100$6.14660$614.66
500$5.23494$2617.47

IRFP4668PBF Product Details

IRFP4668PBF Description


The IRFP4668PBF is a TO-247AC packaging 200V single N channel HEXFET power MOSFET. Improved gate, avalanche, and dynamic dV/dt ruggedness, as well as quick switching, are all features of this MOSFET. SMPS, uninterruptible power supplies, high-speed power switching, hard switched, and high-frequency circuits all benefit from high-efficiency synchronous rectification.


IRFP4668PBF Features


The ruggedness of the Gate, Avalanche, and Dynamic dV/dt

Avalanche SOA and fully characterized capacitance.

Enhanced dV/dt and dI/dt capability of body diodes.

Lead-Free.


IRFP4668PBF Applications


Synchronous Rectification with High Efficiency in SMPS

Power Supply Uninterruptible

Power Switching at High Speed

Circuits with hard switches and high frequencies

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