Name: STY139N65M5
Brand: STMicroelectronics
SKU: STY139N65M5
Price: 38.59000 USD
Availability: InStock

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STY139N65M5

Manufacturer part number:STY139N65M5

Manufacturer:STMicroelectronics

Description:STY139N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STY139N65M5 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ V
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	17mOhm
Technology	MOSFET (Metal Oxide)
Base Part Number	STY139
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	625W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625W
Turn On Delay Time	295 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17m Ω @ 65A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	15600pF @ 100V
Current - Continuous Drain (Id) @ 25°C	130A Tc
Gate Charge (Qg) (Max) @ Vgs	363nC @ 10V
Rise Time	56ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	37 ns
Turn-Off Delay Time	295 ns
Continuous Drain Current (ID)	130A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	520A
Avalanche Energy Rating (Eas)	2400 mJ
Max Junction Temperature (Tj)	150°C
Height	24.6mm
Length	15.9mm
Width	5.3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STY139N65M5 Product Details

STY139N65M5 Description

The STY139N65M5 is an N-channel MDmesh V Power MOSFET that combines STMicroelectronics' well-known PowerMESH horizontal layout structure with an inventive, patented vertical production method. The resulting product is especially well suited for applications that need excellent power density and exceptional efficiency because to its extraordinarily low on-resistance, which is unmatched among silicon-based Power MOSFETs.